note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: scr004c doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / sfs23 ___ ___ screening 2 / __ = not screened tx = tx level txv = txv s = s level voltage/family 23 = 50v 24 =100v 26 = 200v 27 = 250v 28 = 300v 29 = 400v SFS2323 thru sfs2329 1.6 amp silicon controlled rectifier 50 400 volts features: ? low-level gate characteristics ? i gt = 200 a (max) @ 25 o c ? low holding current i h = 1 ma (max) @ 25 o c ? anode common to case ? hermetically sealed maximum ratings symbol value units peak repetitive reverse voltage and dc blocking voltage SFS2323 sfs2324 sfs2326 sfs2327 sfs2328 sfs2329 v drm v rrm 50 100 200 250 300 400 volts non-repetitive peak reverse blocking voltage (t < 5.0 ms) SFS2323 sfs2324 sfs2326 sfs2327 sfs2328 sfs2329 v rsm 75 150 300 350 400 500 volts rms on-state current (all conduction angles) i t (rms) 1.6 amps peak non-repetitive surge current (one cycle, 60 hz, t c = 80 o c ) i tsm 15 amps peak gate power p gm 0.1 watts average gate power p g (av) 0.01 watts peak gate current i gm 0.1 amps peak gate voltage v gm 6.0 volts operating junction temperature range t j -65 to +125 o c storage temperature range t stg -65 to +150 o c thermal resistance, junction to case r jc 30 o c/w notes: 1 / for ordering information, price, operating curves, and availability- contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25oc. to-5
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: scr004c doc electrical characteristics symbol min typical max unit peak reverse blocking current (rated v rrm , t c = 25 o c) (rated v rrm , t c = 125 o c) i rrm ?? 0.12 0.1 1 100 a peak forward blocking current (rated v rrm , t c = 25 o c) (rated v rrm , t c = 125 o c) i drm ?? 0.14 1.0 1 100 a peak on-state voltage (i f = 1.6 a peak) v tm ?? 1.1 1.3 volts gate trigger current (v d = 6 v dc , r l = 100 ? , t c = 25 o c) (v d = 6 v dc , r l = 100 ? , t c = -65 o c) i gt ?? ?? 3.5 9.2 200 350 a gate trigger voltage (v d = 6 v dc , r l = 100 ? , t c = 25 o c) (v d = 6 v dc , r l = 100 ? , t c = -65 o c) (v d = 6 v dc , r l = 100 ? , t c = 125 o c) v gt ?? ?? 0.1 0.51 0.74 0.25 0.7 0.9 0.9 volts holding current (v d = 6 v dc , r l = 100 ? , t c = 25 o c) (v d = 6 v dc , r l = 100 ? , t c = -65 o c) (v d = 6 v dc , r l = 100 ? , t c = 125 o c) i h 0.8 1.5 0.15 1.0 1.8 0.46 2.0 3.0 ?? ma notes: * rgk current is not included in measurement case outline: to-5 ? .335 .305 .260 .240 1.500 min 45 ? .210 .190 .034 .028 .045 .029 pin 3 pin 2 pin 1 ? .021 .016 ? .370 .335 .125 .009 *for information on curves, contact the factory representative for engineering assistance. solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFS2323 thru sfs2329 pin 1: cathode pin 2: gate pin 3: anode
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